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Samsung to use TSMC process for Nvidia custom memory, media report says
Nvidia has requested the same manufacturing process from Samsung, SK Hynix and Micron Technology for its NVHBM base dies, the report said.
Samsung Electronics will make base dies for Nvidia's next-generation custom high-bandwidth memory chips using TSMC's 3-nanometer process, according to a media report. The arrangement would be Samsung's first collaboration with the Taiwanese contract chipmaker in HBM manufacturing, the report said.
Citing industry sources, the report said Nvidia had asked Samsung, SK Hynix and Micron Technology to manufacture NVHBM base dies with TSMC's process. It also requested sixth-generation DRAM technology for the core dies.
Samsung agreed to Nvidia's specifications following an internal review, according to the report. However, it plans to continue producing standard HBM and custom memory for other customers through its own manufacturing operations.
The company is also considering whether its foundry could make NVHBM base dies should demand surpass TSMC's capacity, the report said, citing an unnamed source.
Nvidia introduced NVHBM in August. The company said the design puts its custom memory controller inside the base die and seeks to standardize implementation among multiple memory suppliers.